SMD Type
IC
MOSFET
MOS Field Effect Transistor
2SK3918
TO-252
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low on-state resistance
+0.2
9.70
-0.2
+0.1
0.80
-0.1
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
5 V drive available
+0.15
0.50
-0.15
Low Ciss: Ciss = 1300 pF TYP.
0.127
max
+0.15
5.55
-0.15
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
T
A
=25
T
C
=25
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
Rating
25
20
48
192
1.0
29
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 20V
V
GS
= 10 V
I
D
=48A
I
F
= 48A, V
GS
= 0 V
I
F
= 48 A, V
GS
= 0 V
d
i
/d
t
= 100 A/ ìs
I
D
=24A,V
GS(on)
=10V,R
G
=10
,V
DD
=12.5V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=25V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=12A
V
GS
=10V,I
D
=24A
V
GS
=5.0V,I
D
=12A
2.5
6
2.5
12
5.9
11
1300
310
220
13
14
38
14
28
5
10
0.98
27
15
7.5
22.2
Min
Typ
Max
10
100
3.0
Unit
A
nA
V
S
mÙ
mÙ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
3
.8
0
R
DS(on)1
= 7.5 m
MAX. (V
GS
= 10 V, I
D
= 24 A)
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
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