SMD Type
P-Channel Enhancement Mode
Field Effect Transistor
KO3409
(AO3409)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
+0.1
2.4
-0.1
I
D
= -2.6 A (V
GS
= -10V)
R
DS(ON)
< 130m
R
DS(ON)
< 200m
(V
GS
= -10V)
(V
GS
= -4.5V)
+0.1
1.3
-0.1
V
DS
(V) = -30V
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1. Gate
2.Emitter
2. Source
0-0.1
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
=25
T
A
=70
Pulsed Drain Current
Power Dissipation
T
A
=25
T
A
=70
Themal Resistance. Junction-to-Ambient
Themal Resistance. Junction-to-Case
Junction and Storage Temperature Range
R
thJA
R
thJC
T
J
, T
STG
I
DM
P
D
Symbol
V
DS
V
GS
I
D
Rating
-30
20
-2.6
-2.2
-20
1.4
1
100
63
-55 to 150
/W
/W
W
A
Unit
V
V
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