SMD Type
Silicon PIN diode
BAP64-04
Diodes
SOT-23
Unit: mm
High voltage, current controlled
+0.1
2.4
-0.1
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
Ts = 90
Symbol
V
R
I
F
P
tot
T
stg
T
j
R
th j-s
-65
-65
Min
Max
175
100
250
+150
+150
220
K/W
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
forward voltage
reverse leakage current
Symbol
V
F
V
R
Conditions
I
F
= 50 mA
V
R
= 175 V
V
R
= 20 V
V
R
= 0; f = 1 MHz
diode capacitance
C
d
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
I
F
= 0.5 mA; f = 100 MHz; note 1
diode forward resistance
r
D
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
charge carrier life time
series inductance
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
when switched from I
F
= 10 mA to
L
Min
Typ
0.95
0-0.1
Max
1.1
10
1
Unit
V
A
pF
0.52
0.37
0.23
20
10
2
0.7
1.55
1.4
0.5
0.35
40
20
3.8
1.35
pF
pF
I
R
= 6mA; R
L
= 100
L
S
,
measured at I
R
= 3 mA
S
nH
Marking
Marking
4Kp
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