SMD Type
Silicon PIN Diode
BAR64-02W
Diodes
SOD-523
+0.05
0.3
-0.05
+0.1
1.2
-0.1
Unit: mm
+0.1
0.6
-0.1
Features
Frequency range above 1 MHz
Low resistance and short carrier lifetime
Very low inductance
For frequencies up to 3 GHz
0.07max
+0.05
0.8
-0.05
High voltage current controlled RF resistor for RF attenuator and switches
+
-
+0.1
1.6
-0.1
0.77max
Extremely small plastic SMD package
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
D io d e re v e rs e v o lta g e
F o rw a rd c u rre n t
T o ta l p o w e r d is s ip a tio n ,
J u n c tio n te m p e ra tu re
O p e ra tin g te m p e ra tu re ra n g e
S to ra g e te m p e ra tu re
J u n c tio n - a m b ie n t (N o te 1 )
J u n c tio n - s o ld e rin g p o in t
N o te
1 .P a c k a g e m o u n te d o n a lu m in a 1 5 m m
1 6 .7 m m
0 .7 m m
T
S
125
S ym bol
V
R
I
F
P
to t
T
j
T
op
T
s tg
R
th J A
R
th J S
V a lu e
200
100
250
150
-5 5 to + 1 5 0
-5 5 to + 1 5 0
220
140
K /W
U n it
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Forward voltage
Diode capacitance
Case capacitance
Symbol
V
R
V
F
C
T
C
C
Test Condition
I
(BR)
= 5
A
Min
200
1.1
0.23
0.09
12.5
2.1
0.85
1.55
0.6
20
3.8
1.35
s
nH
0.35
Typ
Max
Unit
V
mV
pF
I
F
= 50 mA
V
R
= 20 V, f = 1 MHz
f = 1 MHz
I
F
= 1 mA, f = 100 MHz
Forward resistance
r
f
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
Charge carrier life time
Series inductance
t
rr
Ls
I
F
= 10 mA, I
R
= 6 mA,I
R
= 3 mA
Marking
Marking
M
+0.05
0.1
-0.02
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