SMD Type
Silicon PIN Diode
BAR64-03W
Diodes
SOD-323
+0.1
1.7
-0.1
Unit: mm
High voltage current controlled RF resistor for RF attenuator and swirches
+0.1
2.6
-0.1
Freqency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
+0.05
0.1
-0.02
1.0max
0.475
0.375
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage
Forward current
Total Power dissipation
Junction tem perature
Operating tem perature range
Storage tem perature range
Junction - soldering point
1)
Note:
1.Package m ounted on alum ina 15m m x 16.7m m x 0.7m m
T
S
25
Sym bol
V
R
I
F
P
tot
T
j
T
op
T
stg
R
thJA
Value
200
100
250
150
-55 to +150
-55 to +150
450
K/W
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Forward voltage
Diode capacitance
Symbol
V
(BR)
V
F
C
T
Conditions
I
R
= 5
A
Min
200
1.1
0.23
12.5
2.1
0.85
1.55
2
0.35
20
3.8
1.35
s
nH
Typ
Max
Unit
V
V
pF
V
R
= 20 V, f = 1 MHz
V
R
= 0 V, f = 100 MHz
I
F
= 1 mA, f = 100 MHz
Forward resistance
rf
I
F
= 10 mA, f = 100 MHz
I
F
= 100 mA, f = 100 MHz
Charge carrier life time
Series inductance
rr
I
F
= 10 mA, I
R
= 6 mA,I
R
= 3mA
Ls
Marking
Marking
2
+0.1
1.3
-0.1
Features
+0.05
0.3
-0.05
+0.05
0.85
-0.05
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