SMD Type
Silicon Switching Diode
BAR74
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
For high-speed switching applications
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage
Peak reverse volatge
Forward current
Surege forward current, T = 1
s
Sym bol
V
R
V
RM
I
F
I
FS
P
tot
T
j
T
stg
R
th JA
R
th JS
Value
50
50
250
4.5
370
150
-65 to +150
330
260
1.5 m m /6 cm
2
Cu.
K/W
K/W
Unit
V
V
mA
A
mW
Total power dissipation, Ts = 54
Junction tem perature
Storage tem perature range
Junction am bient (Note 1)
Junction soldering point
Note
1. Package m ounted on epoxy pcb 40 m m
40 m m
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol
V
R
V
F
I
R
C
D
t
rr
Conditions
I
R
=100
A
Min
50
1
0.1
100
2
4
Typ
Max
Unit
V
V
A
pF
ns
I
F
= 100 mA
V
R
= 50 V
V
R
= 50 V,Ta = 150
V
R
= 0 V,f = 1 MHz
I
F
= I
R
= 10 mA,R
L
= 100
,
measured at I
R
= 1 mA
Marking
Marking
JBs
0-0.1
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