SMD Type
Schottky barrier(double) diodes
BAS70W;BAS70-04W
BAS70-05W;BAS70-06W
Diodes
Features
Low forward voltage
High breakdown voltage
Guard ring protected
Very small SMD package
Low capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
R
th j-a
Note 1
-65
t
p
t
p
1 s; ä
0.5
Conditions
Min
Max
70
70
70
100
-65
+150
150
+150
625
K/W
Unit
V
mA
mA
mA
10 ms
E lectrical C haracteristics T a = 25
P aram eter
S ym bol
C ondition
I
F
= 1 m A
Forward V oltage
V
F
I
F
= 10 m A
I
F
= 15 m A
R everse C urrent
C harge carrier life tim e (K rakauer m ethod)
D iode capacitance
N ote
1. P ulse test: tp = 300 m s; d = 0.02.
C
d
I
R
V
R
= 50 V ; note 1
V
R
= 70 V ; note 1
I
F
= 5 m A
f = 1 M H z; V
R
= 0
M ax
410
750
1
100
10
100
2
U nit
mV
mV
V
nA
A
ps
pF
Marking
Type
Marking
BAS70W
73*
BAS70-04W
74*
BAS70-05W
75*
BAS70-06W
76*
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