SMD Type
Silicon Schottky Diode
BAT17-04W,BAT17-05W,BAT17-06W
Diodes
Features
For mixer applications in VHF/UHF range
For high-speed switching application
Absolute M axim um Ratings Ta = 25
Param eter
Diode reverse voltage
Forward current
Total power dissipation
Junction tem perature
Operating tem perature range
Storage tem perature
Junction - soldering point(Note 1)
Note
1.For calculation of RthJA please refer to Application Note Therm al Resistance
T
S
92
Sym bol
V
R
I
F
P
tot
T
j
T
op
T
stg
R
thJS
Value
4
130
150
150
-55 to +125
-55 to +150
390
K/W
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Param eter
Breakdown voltage
Sym bol
V
(BR)
Conditions
I
(BR)
= 10
V
R
= 3 V
Reverse current
I
R
V
R
= 4 V
V
R
= 3 V, T
A
= 60
I
F
= 0.1 m A
Forward voltage
V
F
I
F
= 1 m A
I
F
= 10 m A
Forward voltage m atching(Note 1)
Diode capacitance
Differential forward resistance
Note
1.ÄV
F
is the difference between lowest and highest V
F
in m ultiple diode com ponent.
ÄV
F
C
T
R
F
I
F
= 1 m A
V
R
= 0 , f = 1 MHz
I
F
= 5 m A, f = 10 KHz
0.4
0.55
8
200
250
350
275
340
425
A
Min
4
0.25
10
1.25
350
450
600
20
0.75
15
mV
pF
mV
A
Typ
Max
Unit
V
Marking
Type
Marking
BAT17-04W BAT17-05W BAT17-06W
54S
55S
56S
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