SMD Type
Schottky barrier(double) diodes
BAT54W Series
Diodes
Features
Low forward voltage
Guard ring protected
Very small SMD package.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Total power dissipation (per package)
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Symbol
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
R
th j-a
-65
tp
1 s; d
t
p
< 10 ms
T
amb
25
-65
0.5
Conditions
Min
Max
30
200
300
600
200
+150
125
+125
625
K/W
Unit
V
mA
mA
mA
mW
Electrical Characteristics T a = 25
Param eter
Sym bol
Conditions
I
F
= 0.1 m A
I
F
= 1 m A
Forward voltage
V
F
I
F
= 10 m A
I
F
= 30 m A
I
F
= 100 m A
Reverse current
Reverse recovery tim e
Diode capacitance
Note
1. Pulse test: t
p
300
s; ä
0.02.
I
R
t
rr
C
d
V
R
= 25 V; Note 1
when switched from I
F
= 10 m A to
I
R
= 10 m A; R
L
= 100
m easured at I
R
= 1 m A
10
pF
Max
240
320
400
500
800
2
5
A
ns
mV
Unit
f = 1 MHz; V
R
= 1 V;
Marking
Type
Marking
BAT54W
L4
BAT54AW
42
BAT54CW
43
BAT54SW
44
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