SMD Type
Silicon Schottky Diode
BAT62
Diodes
Unit: mm
Features
Low barrier diode for detectors up to GHz frequencies.
Absolute Maxim um Ratings Ta = 25
Param eter
Reverse voltage
Forward current
Total power dissipation, T
S
Junction tem perature
Storage tem perature range
Junction - am bient
1)
Junction - soldering point
Note
1.Package m ounted on alum ina 15 m m
16.7 m m
0.7 m m .
85
Sym bol
V
R
I
F
P
tot
T
j
T
stg
R
th JA
R
th JS
Value
40
20
100
150
-55 to + 150
810
650
K/W
K/W
Unit
V
mA
mW
Electrical Characteristics Ta = 25
Param eter
Reverse current
Forward voltage
Diode capacitance
Case capacitance
Differential resistance
Series inductance
Sym bol
I
R
I
F
C
T
C
C
R
O
L
S
V
R
= 0, f = 10 KHz
Test Condition
V
R
= 40 V
I
F
= 2 m A
f = 1 MHz; V
R
= 0
0.58
0.35
0.1
225
2
Min
Typ
Max
10
1
0.6
Unit
A
V
pF
pF
K
nH
Marking
Marking
62
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