SMD Type
Silicon Schottky Diodes
BAT64 series
Diodes
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
For low-loss,fast-recovery, meter protection
bias isolation and clamping applications
Integrated diffused guard ring
Low forward current
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
D io d e re ve rs e vo lta g e
F o rw a rd c u rre n t
A ve ra g e fo rw a rd c u rre n t (5 0 /6 0 H z,s in u s )
S u rg e fo rw a rd c u rre n t
(t
10 m s)
S ym b o l
V
R
I
F
I
F A V
I
F S M
P
to t
T
j
T
stg
R
th
R
th
JA
JS
M ax
40
250
120
800
250
150
-5 5 to + 1 5 0
495
355
U n it
V
mA
mA
mA
mW
T o ta l p o w e r d is s ip a tio n T s = 6 1
J u n c tio n te m p e ra tu re
S to ra g e te m p e ra tu re
J u n c tio n a m b ie n t (N o te 1 )
J u n c tio n s o ld e rin g p o in t
N o te
1 . P a c k a g e m o u n te d o n e p o xy p c b 4 0 m m
40 m m m
KW
KW
1 .5 m m /0 .5 c m
2
C u
Electrical Characteristics Ta = 25
Param eter
Reverse current
Sym bol
I
R
Conditions
V
R
= 25 V,T
A
= 25
V
R
= 25 V,T
A
= 85
I
F
= 1 m A
Forward voltage
V
F
I
F
= 10 m A
I
F
= 30 m A
I
F
= 100 m A
Diode capacitance
C
T
V
R
= 1 V,f = 1 MHz
320
385
440
570
4
Min
Typ
Max
2
200
350
430
520
750
6
Unit
A
mV
V
V
V
pF
Marking
Type
Marking
BAT64
63s
BAT64-04
64s
BAT64-05
65s
BAT64-06
66s
0-0.1
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