SMD Type
Switching Diode
BAS16T;BAW56T
BAV70T;BAV99T
SOT-523
+0.1
1.6
-0.1
+0.1
1.0
-0.1
+0.05
0.2
-0.05
Diodes
Unit: mm
+0.01
0.1
-0.01
2
1
+0.15
1.6
-0.15
0.55
Features
+0.25
0.3
-0.05
+0.1
0.5
-0.1
0.35
3
1. Base
+0.05
0.75
-0.05
+0.1
-0.1
0.8
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
Power dissipation
Forward Current
Reverse Voltage
Operating and storage junction temperature range
(T
a mb
=25
)
Symbol
P
D
I
F
V
R
T
J
, T
stg
Limits
150
75
85
-55 to +150
Unit
mW
mA
V
Electrical Characteristics Ta = 25
Param eter
Reverse breakdown voltage
Reverse voltage leakage current
Sym bol
V
(BR)
I
R
Conditions
I
R
= 100
A
Min
85
2
0.03
715
855
1000
1250
1.5
4
pF
ns
mV
Max
Unit
V
A
V
R
=75 V
V
R
=25 V
I
F
=1 m A
Forward
voltage
V
F
I
F
=10 m A
I
F
= 50 m A
I
F
=150 m A
Diode capacitance
Reverse recovery tim e
C
D
t
rr
V
R
=0 V,f=1MHz
Marking
Type
Marking
BAS16T
A2
BAW56T
JD
BAV70T
JJ
BAV99T
JE
+0.05
0.8
-0.05
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