SMD Type
PNP Silicon AF Transistors
KC807(BC807)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
Features
For general AF applications.
High collector current.
High current gain.
Low collector-emitter saturation voltage.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Rating
-50
-45
-5
-800
310
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base emitter on voltage
Output Capacitance
Transition frequency
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
V
CBO
V
CEO
V
EBO
I
CES
I
EBO
h
FE
I
C
= -300 mA, V
CE
= -1 V
V
CE(sat)
I
C
= -500 mA, I
B
= -50 mA
V
BE(on)
V
CE
=-1V,I
C
=300mA
C
ob
f
T
V
CB
=-10V,f=1MHz
I
C
= -10 mA, V
CE
= -5 V, f = 50 MHz
100
60
-0.7
-1.2
12
V
V
pF
MHz
I
C
= -10
Testconditons
A,V
BE
= 0
Min
-50
-45
-5
-100
-100
100
630
Typ
Max
Unit
V
V
V
nA
nA
I
C
= -10 mA, I
B
= 0
I
E
= -10
A, I
C
= 0
V
CB
= -25 V, V
BE
= 0
V
EB
= -4 V, I
C
= 0
I
C
= -100 mA, V
CE
= -1 V
Marking
NO.
Marking
hFE
KC807-16
9FA
100
250
KC807-25
9FB
160
400
KC807-40
9FC
250
630
+0.1
0.38
-0.1
0-0.1
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