SMD Type
BCW31,BCW32,BCW33
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BCW31
DC current gain
BCW32
BCW33
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
Base to emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
Noise figure
V
BE(sat)
V
BE
C
C
f
T
NF
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= ie = 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200 ìA; V
CE
= 5 V; R
S
= 2 kÙ;
f = 1 kHz; B = 200 Hz
h
FE
I
C
= 2 mA; V
CE
= 5 V
Symbol
I
CBO
I
CBO
I
EBO
Testconditons
I
E
= 0; V
CB
= 32 V
I
E
= 0; V
CB
= 32 V; T
j
= 100
I
C
= 0; V
EB
= 5 V
Transistors
IC
Min
Typ
Max
100
10
100
Unit
nA
ìA
nA
110
200
420
120
210
750
850
550
2.5
100
120
450
800
250
mV
mV
mV
mV
700
mV
pF
MHz
10
dB
h
FE
Classification
TYPE
Marking
BCW31
D1
BCW32
D2
BCW33
D3
2
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