SMD Type
PNP General Purpose Transistors
BCX17,BCX18
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Features
Low current (max. 100 mA).
Low voltage (max. 32 V).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation *
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
R
amb
R
th j-a
BCX17
-50
-45
-5
-500
-1000
-200
250
-65 to +150
150
-65 to +150
500
K/W
BCX18
-30
-25
Unit
V
V
V
mA
mA
mA
mW
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
I
CBO
I
CBO
I
EBO
Testconditons
I
E
= 0; V
CB
= -20 V
I
E
= 0; V
CB
= -20 V; T
j
= 100
I
C
= 0; V
EB
= -5 V
I
C
= -100 mA; V
CE
= -1 V
DC current gain
h
FE
I
C
= -300 mA; V
CE
= -1 V
I
C
= -500 mA; V
CE
= -1 V
Collector-emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
V
CE(sat)
V
BE
C
C
f
T
I
C
= -500 mA; I
B
= -50 mA
I
C
= -500 mA; V
CE
= -1 V
I
E
= ie = 0; V
CB
= -10 V; f = 1 MHz
I
C
= -10 mA; V
CE
= -5 V; f = 100 MHz
80
9
100
70
40
-620
-1.2
mV
V
pF
MHz
Min
Typ
Max
-100
-5
-100
600
Unit
nA
ìA
nA
h
FE
Classification
TYPE
Marking
BCX17
T1
BCX18
T2
+0.1
0.38
-0.1
0-0.1
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