SMD Type
PNP High-Voltage Transistors
BF821,BF823
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
Low current (max. 50 mA)
High voltage (max. 300 V).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
BF821
BF823
Collector-emitter voltage
BF821
BF823
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation *
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
R
amb
R
th j-a
V
CEO
Symbol
V
CBO
Rating
-300
-250
-300
-250
-5
-50
-100
-50
250
-65 to +150
150
-65 to +150
500
K/W
Unit
V
V
V
V
V
mA
mA
mA
mW
* Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage
Feedback capacitance
Transition frequency
Symbol
I
CBO
I
EBO
h
FE
V
CEsat
C
re
f
T
Testconditons
I
E
= 0; V
CB
= -200 V
I
E
= 0; V
CB
= -200 V; T
j
= 150
I
C
= 0; V
EB
= -5 V
I
C
= -25 mA; V
CE
= -20 V
I
C
= -30 mA; I
B
= -5 mA
I
C
= ic = 0; V
CB
= -30 V; f = 1 MHz
I
C
= -10 mA; V
CE
= -10 V; f = 100 MHz
60
50
-800
1.6
mV
pF
MHz
Min
Typ
Max
-10
-10
-50
Unit
nA
ìA
nA
h
FE
Classification
TYPE
Marking
BF821
1W
BF823
1Y
+0.1
0.38
-0.1
0-0.1
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