SMD Type
Transistors
NPN Medium Frequency Transistor
BFS19
SOT-23
Unit: mm
Features
3
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Low current (max. 30 mA)
+0.1
2.4
-0.1
Low Voltage (max. 20 V)
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings T
A
=25
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Max
30
20
5
30
30
250
150
150
150
Unit
V
V
V
mA
mA
mW
Electrical Characteristics T
A
=25
Parameter
Collector-base Breakdown voltage
Collector-emitter Breakdown voltage
Emitter-base Breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Forward current transfer ratio
Emitter-base voltage
Transition frequency
Collector capacitance
Feedback capacitance
3
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CB
= 20 V , I
E
= 0, Tj = 100
I
EBO
h
FE
V
BE
f
T
C
C
Cre
V
EB
= 5.0 V , I
C
= 0
V
CE
= 10 V , I
C
= 1.0 mA
V
CE
= 10 V , I
C
= 1.0 mA
V
CE
= 10 V , I
C
= 1 mA ,f = 100 MHZ
V
CB
= 10 V , I
E
= 1 mA ,f = 1 MHZ
V
CB
= 10 V , I
C
= 0 mA, f = 1 MHz
65
650
260
1
0.85
10
100
225
740
mV
MHz
pF
pF
ìA
nA
Test conditions
I
C
= 100 ìA , I
E
= 0
I
C
= 1mA , I
B
= 0
I
E
= 100 ìA , I
C
= 0
V
CB
= 20 V , I
E
= 0
Min
30
20
5
100
Typ
Max
Unit
V
V
V
nA
Marking
Marking
F2
+0.1
0.38
-0.1
0-0.1
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