SMD Type
PNP High-Voltage Transistor
BSP16
SOT-223
+0.2
6.50
-0.2
Transistors
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
High voltage (max. 350 V).
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
1
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage (open emitter)
collector-emitter voltage (open base)
emitter-base voltage (open collector)
collector current (DC)
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient *
thermal resistance from junction to soldering point
T
amb
25
*
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
T
amb
Rth j-a
Rth j-s
Rating
-350
-300
-6
-200
-200
1.28
-65 to 150
150
-65 to 150
97
16
K/W
K/W
Unit
V
V
V
mA
mA
W
* . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad
for collector 1 cm
2
.
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
Symbol
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
Testconditons
I
E
= 0; V
CB
= -280 V
I
C
= 0; V
EB
= -6 V
I
C
= -50 mA; V
CE
= -10 V
I
C
= -50 mA; I
B
= -5 mA
I
E
= i
e
= 0; V
CB
= -10 V; f = 1 MHz
I
C
= -10 mA; V
CE
= -10 V; f = 100 MHz
15
30
Min
Typ
Max
-100
-100
120
-2
15
V
pF
MHz
Unit
nA
nA
+0.15
1.65
-0.15
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