SMD Type
PNP Silicon Switching Transistors
BSS80,BSS82
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
High DC current gain: 0.1mA to 500 mA.
Low collector-emitter saturation voltage.
+0.1
1.3
-0.1
Features
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,T
S
= 77
Junction temperature
Storage temperature
Junction - soldering point
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
R
thJS
BSS80
40
60
5
800
1
100
200
330
150
-65 to +150
220
K/W
BSS82
60
Unit
V
V
V
mA
A
mA
mA
mW
0-0.1
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