SMD Type
PNP Silicon Extremely High Voltage
Darlington Transistor
CZT2000
SOT-223
+0.2
6.50
-0.2
Transistors
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
1
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
È
JA
Rating
200
200
10
600
2
-65 to 150
62.5
/W
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Symbol
I
CBO
I
EBO
B
VCES
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(ON)
V
CB
=180V
V
BE
=10V
I
C
=1.0mA
I
C
=20mA, I
B
=25ìA
I
C
=80mA, I
B
=40ìA
I
C
=160mA, I
B
=100ìA
V
CE
=5.0V, I
C
=160mA
V
CE
=5.0V, I
C
=100ìA
h
FE
V
CE
=5.0V, I
C
=10mA
V
CE
=5.0V, I
C
=160mA
3,000
3,000
3,000
200
0.9
1.1
1.2
2.0
Testconditons
Min
Max
500
100
Unit
nA
nA
V
V
V
V
V
+0.15
1.65
-0.15
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