SMD Type
Transistors
NPN Silicon Extremely High Voltage Transistor
CZTA44
SOT-223
+0.2
6.50
-0.2
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
1
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
È
JA
Rating
450
400
6
300
2
-65 to 150
62.5
/W
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Symbol
I
CBO
I
CES
I
EBO
B
VCBO
B
VCES
B
VCEO
B
VEBO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
CB
=400V
V
CE
=400V
V
BE
=4.0V
I
C
=100ìA
I
C
=100ìA
I
C
=1.0mA
I
E
=10ìA
I
C
=1.0mA, I
B
=0.1mA
I
C
=10mA, I
B
=1.0mA
I
C
=50mA, I
B
=5.0mA
I
C
=10mA, I
B
=1.0mA
V
CE
=10V, I
C
=1.0mA
h
FE
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
f
T
C
ob
C
ib
V
CE
=10V, I
C
=10mA, f=10MHz
V
CB
=20V, I
E
=0, f=1.0MHz
V
EB
=0.5V, I
C
=0, f=1.0MHz
40
50
45
20
20
7.0
130
MHz
pF
pF
200
450
450
400
6.0
0.40
0.50
0.75
0.75
Testconditons
Min
Max
100
500
100
Unit
nA
nA
nA
V
V
V
V
V
V
V
V
+0.15
1.65
-0.15
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