SMD Type
Digital Transistors
DTDG23YP
Transistors
Features
NPN Epitaxial Planar Silicon Transistor
(with built-in resistors and zener diode).
High DC Current Gain.
Built-in Zener Diode Gives Strong Protection
Against Reverse Surge By L-load (an inductive load).
Absolute Maximum Ratings Ta = 25
Parameter
Supply Voltage
Input Voltage
Collector Current
Power Dissipation
Junction temperature
Storage temperature
*1 Pw 10ms, Duty cycle 2%
*2 When mounted on 40x40x0.7mm ceramic board.
Symbol
V
CC
V
IN
I
C
I
CP
*1
P
D
T
j
T
stg
*2
Rating
60 10
-6 to +40
1
2
1.5
150
-55 to +150
W
Unit
V
V
A
Electrical Characteristics Ta = 25
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Emitter-base Resistance
Transistion Frequency
* Characteristics of built-in transistor
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
f
T
*
V
CE
= 5V , I
E
= -0.1A , f = 30MHz
Testconditons
V
CC
= 5V , I
O
= 100 A
V
O
= 0.4V , I
O
= 100mA
I
O
/I
I
= 500mA/5mA
V
I
= 5V
V
CC
= 40V , V
I
= 0V
V
O
= 2V , I
O
= 500mA
300
1.54
7
2.2
10
80
2.86
13
k
k
MHz
2
0.4
3.6
0.5
V
mA
A
Min
Typ
Max
0.3
Unit
V
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