SMD Type
MOSFET
N-Channel SMPS Power MOSFET
KDB15N50
(FDB15N50)
Features
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
+0.2
8.7
-0.2
+0.1
1.27
-0.1
TO
-
263
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Unit: mm
Reduced Miller Capacitance and Low Input Capacitance
Improved Switching Speed with Low EMI
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+0.2
5.28
-0.2
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
T
C
=25
Symbol
V
DSS
V
GSS
I
D
I
dp
P
D
R
èJA
T
ch
T
stg
Rating
500
30
15
60
300
2
62
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
Drain current-pulsed
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Channel temperature
Storage temperature
5.60
1 Gate
2 Drain
3 Source
Reduced r
DS(ON)
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