SMD Type
MOSFET
N-Channel PowerTrench MOSFET
KDB3632
(FDB3632)
TO
-
263
+0.1
1.27
-0.1
Features
r
DS(ON)
= 7.5m
(Typ.), V
GS
= 10V, I
D
= 80A
Q
g(tot)
= 84nC (Typ.), V
GS
= 10V
Low Miller Charge
+0.1
1.27
-0.1
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
UIS Capability (Single Pulse and Repetitive Pulse)
+0.2
5.28
-0.2
0.1max
+0.1
0.81
-0.1
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
Low Q
RR
Body Diode
+0.2
8.7
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous
T
C
111
T
A
=25
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
R
èJA
R
èJC
T
ch
T
stg
P
D
Symbol
V
DSS
V
GSS
I
D
Rating
100
20
80
12
310
2.07
43
0.48
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
5.60
1 Gate
2 Drain
3 Source
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
