SMD Type
N-Channel PowerTrench MOSFET
FDN5630
MOSFET
■
Features
●
V
DS
(V) = 60V
●
R
DS(ON)
＜100
mΩ (V
GS
= 10V)
+0.1
2.4
-0.1
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
1
2
●
Low gate charge
●
Very fast switching
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
●
Optimized for use in high frequency DC/DC converters
+0.1
1.3
-0.1
●
R
DS(ON)
＜120
mΩ (V
GS
= 6V)
0.4
3
+0.05
0.1
-0.01
0.97
1.Base
1. Gate
2.Emitter
2. Source
+0.1
0.38
-0.1
0-0.1
+0.1
-0.1
3. Drain
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-to-source voltage
Drain curent -Continuous
-Pulsed
Power dissipation
Maximum Junction-to-Ambient
Junction and storage temperature range
P
D
R
θJA
T
J
,T
STG
Symbol
V
DS
V
GS
I
D
Rating
60
±20
1.7
10
0.5
250
-55 to +150
W
℃/W
℃
Unit
V
V
A
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