SMD Type
Medium Power Transistor
FMMT449
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
Low equivalent on-resistance.
+0.1
1.3
-0.1
Features
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j,
T
stg
Rating
50
30
5
2
1
200
500
-55 to +125
Unit
V
V
V
A
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Symbol
V
(BR)CBO
I
C
=1mA,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
V
(BR)EBO
I
E
=100ìA,I
C
=0
I
CBO
I
EBO
V
CE(
sat)
V
CB
=40V,I
E
=0
V
CB
=40V,Tam
B
=100
V
EB
=4V,I
C
=0
I
C
=1A,I
B
=100mA
I
C
=2A,I
B
=200mA
Testconditons
Min
50
30
5
0.1
10
0.1
0.5
1.0
1.25
1.0
70
100
80
40
150
15
MHz
pF
300
Typ
Max
Unit
V
V
V
ìA
ìA
ìA
V
V
V
V
BE(
sat) I
C
=1A,I
B
=100mA
V
BE(ON)
I
C
=1A,V
CE
=2V
I
C
=50mA, V
CE
=2V*
Static Forward Current Transfer Ratio
h
FE
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
Current-gain-bandwidth product
Output capacitance
* Pulse width=300ìs. Duty cycle
2%
f
T
C
obo
I
C
=50mA,V
CE
=10V,f=100MHz
V
CB
=10V,f=1MHz
Marking
Marking
449
0-0.1
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