SMD Type
Medium Power Transistor
FMMT491
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
+0.1
2.4
-0.1
Low equivalent on-resistance.
1
2
+0.1
1.3
-0.1
Features
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j,
T
stg
Rating
80
60
5
2
1
500
-55 to +150
Unit
V
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Symbol
V
(BR)CBO
I
C
=100ìA
V
(BR)CEO
I
C
=10mA
V
(BR)EBO
I
E
=100ìA
I
CBO
I
EBO
V
CE(
sat)
V
CB
=60V
V
EB
=4V
I
C
=500mA,I
B
=50mA
I
C
=1A,I
B
=100mA
Testconditons
Min
80
60
5
100
100
0.25
0.50
1.1
1.0
100
100
80
30
150
10
MHz
pF
300
Typ
Max
Unit
V
V
V
nA
nA
V
V
V
V
BE(
sat) I
C
=1A,I
B
=100mA
V
BE(ON)
I
C
=1A,V
CE
=5V
I
C
=1mA,V
CE
=5V
Static Forward Current Transfer Ratio *
h
FE
I
C
=500mA,V
CE
=5V
I
C
=1A,V
CE
=5V
I
C
=2A,V
CE
=5V
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp
300 ìs; d
0.02.
f
T
C
obo
I
C
=50mA,V
CE
=10V,f=100MHz
V
CB
=10V,f=1MHz
Marking
Marking
491
0-0.1
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