SMD Type
NPN Silicon Planar
Medium Power High Gain Transistor
FZT1049A
SOT-223
Transistors
Unit: mm
+0.2
3.50
-0.2
Features
V
CEO
= 30V.
5 Amp continuous current.
20 Amp pulse current.
Low saturation voltage.
High gain.
Extremely low equivalent on-resistance; R
CE(sat)
= 50mÙ at 5A.
1
+0.2
6.50
-0.2
0
.1max
+0.05
0.90
-0.05
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
2
2.9
4.6
3
+0.1
0.70
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j,
T
stg
Rating
80
30
5
5
20
500
2.5
-55 to +150
Unit
V
V
V
A
A
mA
W
+0.15
1.65
-0.15
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