SMD Type
NPN Silicon Planar High Current
(High Performance) Transistor
FZT849
SOT-223
Transistors
Unit: mm
+0.2
3.50
-0.2
Features
Extremely low equivalent on-resistance; R
CE(sat)
36mÙ at 5A.
7 Amp continuous collector current (20 Amp peak).
+0.2
6.50
-0.2
0
.1max
+0.05
0.90
-0.05
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
Very low saturation voltages.
Excellent gain charateristics specified upto 20 Amp.
P
tot
= 3 Watts.
1
2
2.9
4.6
3
+0.1
0.70
-0.1
4
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j,
T
stg
Rating
80
30
6
7
20
3
-55 to +150
Unit
V
V
V
A
A
W
+0.15
1.65
-0.15
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