SMD Type
PNP Silicon Planar High Current
(High Performance) Transistor
FZT949
SOT-223
Transistors
Unit: mm
+0.2
3.50
-0.2
Features
Extremely low equivalent on-resistance; R
CE(sat).
6 Amps continuous current.
Up to 20 Amps peak current.
Very low saturation voltage.
Excellent hFE characteristics specified upto 20 Amps.
1
+0.2
6.50
-0.2
0
.1max
+0.05
0.90
-0.05
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
2
2.9
4.6
3
+0.1
0.70
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation
Operating and storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j,
T
stg
Rating
-50
-30
-6
-20
-5.5
3
-55 to +150
Unit
V
V
V
A
A
W
+0.15
1.65
-0.15
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