SMD Type
Transistors
NPN Silicon Planar High Voltage Transistor
FZT955;FZT956
SOT-223
+0.2
6.50
-0.2
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
4 Amps continuous current
Very low saturation voltages
Excellent gain characteristics specified up to 3 Amps
1
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25
Operating and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
FZT955
-180
-140
-6
-10
-4
3
-55 to +150
FZT956
-220
-200
-6
-5
-2
3
-55 to +150
Unit
V
V
V
A
A
W
+0.15
1.65
-0.15
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