SMD Type
P-channel enhancement mode
vertical D-MOS transistor
KSP92
SOT-223
Transistors
IC
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
Low threshold voltage V
GS(th)
Direct interface to C-MOS, TTL,etc.
High-speed switching
No secondary breakdown.
+0.2
6.50
-0.2
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1
2
2.9
4.6
3
+0.1
0.70
-0.1
1 gate
2,4 drain
3 source
Absolute Maximum Ratings Ta = 25
Parameter
drain-source voltage
gate-source voltage (open drain)
DC drain current
peak drain current
total power dissipation (up to T
amb
= 25 *)
storage temperature range
junction temperature
from junction to ambient*
Symbol
-V
DS
V
GSO
-I
D
-I
DM
P
tot
T
stg
T
j
R
th j-a
Rating
240
20
180
720
1.5
-65 to 150
150
83.3
K/W
Unit
V
V
mA
mA
W
* Transistor mounted on an epoxy printed circuit board, 40X40 X 1.5 mm,
mounting pad for the drain tab minimum 6 cm
2
.
+0.15
1.65
-0.15
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