SMD Type
Complementary Power Transistors
MJD31,MJD31C(NPN)
MJD32,MJD32C(PNP)
Transistors
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Pb-Free Packages are Available
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
MJD31,MJD32
MJD31C,MJD32C
Collector-base voltage
MJD31,MJD32
MJD31C,MJD32C
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Total Device Dissipation FR-5 Board
@T
A
= 25
Derate above 25
Total Device Dissipation Alumina Substrate
@T
A
= 25
Derate above 25
Junction temperature
Storage temperature
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Lead Temperature for Soldering Purposes
V
EB
I
C
I
CP
I
B
P
D
V
CB
Symbol
V
CEO
Rating
40
100
40
100
5
3
5
1
15
0.12
1.56
0.012
150
-65 to +150
8.3
80
260
/W
/W
Unit
V
V
V
V
V
A
A
A
W
W/
W
W/
P
D
T
j
T
stg
R
èJC
R
èJA
TL
3
.8
0
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