SMD Type
High Voltage Transistors
MMBTA43
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
Features
NPN Silicon
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current-continuous
Total device dissipation FR-5 board *1
@TA = 25
Derate above 25
Thermal resistance, junction-to-ambient
Total device dissipation alumina substrate *2
@TA = 25
derate above 25
Thermal resistance, junction-to-ambient
Junction and storage temperature
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
R
èJA
T
J
, T
stg
P
D
300
2.4
417
-55 to +150
mW
mW/
/W
R
èJA
P
D
225
1.8
556
mW
mW/
/W
Symbol
V
CEO
V
CBO
V
EBO
I
C
Rating
200
200
6
500
Unit
V
V
V
mA
+0.1
0.38
-0.1
0-0.1
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