SMD Type
PNP Current Driver Transistor
NZT753
SOT-223
+0.2
6.50
-0.2
Transistors
Unit: mm
+0.2
3.50
-0.2
0
.1max
+0.05
0.90
-0.05
Features
+0.1
3.00
-0.1
+0.2
0.90
-0.2
+0.3
7.00
-0.3
4
1 Base
1
2
2.9
4.6
3
0.70
+0.1
-0.1
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
P
D
R
èJA
Rating
-100
-120
-5
-4
- 55 to +150
1.2
9.7
103
W
mW/
/W
Unit
V
V
V
A
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25
Thermal Resistance, Junction to Ambient
Electrical Characteristics Ta = 25
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
unless otherwise stated
Symbol
B
VCEO
B
VCBO
B
VEBO
I
CBO
I
EBO
Testconditons
I
C
= -10mA, I
B
= 0
I
C
= -100ìA, I
E
= 0
I
E
= -100ìA, I
C
= 0
V
CB
= -100V, I
E
= 0
T
A
= 100
V
EB
= -4V, I
C
= 0
V
CE
= -2.0V, I
C
= -50mA
70
100
55
-0.3
-1.25
-1.0
75
V
V
V
MHz
300
Min
-100
-120
-5.0
-0.1
-10
-0.1
Typ
Max
Unit
V
V
V
ìA
ìA
ìA
DC Current Gain
h
FE
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
*Pulse Test: Pulse Width
V
CE(sat)
V
BE(sat)
V
BE(on)
f
T
I
C
= -1.0A, I
C
= -50mA
I
C
= -1.0A, I
B
= -100mA
V
CE
= -2.0V, I
C
= -1.0A,
V
CE
= -5V, I
C
= -100mA, f = 100MHz
300ìs, Duty Cycle
2.0%
+0.15
1.65
-0.15
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