PNP S I L I C O N T R A N S I S T O R
K I
SEMICONDUCTOR
█
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
C945
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ABSOLUTE MAXIMUM RATINGS（T
a
=25℃）
T
stg
——Storage
Temperature………………………… -55~150℃
T
j
——Junction
Temperature…………………………………150℃
P
C
——Collector
Dissipation…………………………………250mW
V
CBO
——Collector-Base
Voltage………………………………60V
V
CEO
——Collector-Emitter
Voltage……………………………50V
V
EBO
——Emitter-Base
Voltage………………………………5V
I
C
——Collector
Current……………………………………150mA
TO-92
1―Emitter，E
2―Base，B
3―Collector，
C
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ELECTRICAL CHARACTERISTICS（T
a
=25℃）
Symbol
Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Min
Typ
Max
Unit
Test Conditions
BV
CBO
BV
CEO
BV
EBO
H
FE
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
f
T
Cob
NF
60
50
5
90
600
0.3
1.0
100
100
250
3.0
4.0
V
V
V
V
V
nA
nA
MHz
pF
dB
I
C
=100μA,
I
C
=100μA,
I
E
=0
I
B
=0
I
E
=100μA，I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0，f=1MHz
V
CE
=6V,I
C
=0.5mA，f=1KHz，
Rs=500Ω
DC Current Gain
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter
Cut-off Current
Current Gain-Bandwidth Product
Output Capacitance
Noise Figure
█
h
FE
Classification
R
90—180
Q
135—270
P
200—400
K
300—600
KISEMICONDUCTOR [ Kwang Myoung I.S. CO.,LTD ]
