2SA1980M
PNP Silicon Transistor
Description
•
General small signal amplifier
PIN Connection
Features
•
Low collector saturation voltage :
V
CE(sat)
=-0.3V(Max.)
•
Low output capacitance : C
ob
=4pF(Typ.)
•
Complementary pair with 2SC5343M
B
C
E
TO-92M
Ordering Information
Type NO.
2SA1980M
Marking
1980
Package Code
TO-92M
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-50
-50
-5
-150
400
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NF
Test Condition
I
C
=-100μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1KHz, Rg=10KΩ
Min. Typ. Max.
-50
-50
-5
-
-
70
-
80
-
-
-
-
-
-
-
-
-
-
4
-
-
-
-
-0.1
-0.1
700
-0.3
-
7
10
Unit
V
V
V
μA
μA
-
V
MHz
pF
dB
*: h
FE
rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700
KSD-R0B047-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
