2SC5342M
NPN Silicon Transistor
Description
•
Medium power amplifier
PIN Connection
Features
•
Large collector current : I
C
=500mA
•
Low collector saturation voltage enabling
low-voltage operation
•
Complementary pair with 2SA1979M
B
C
E
TO-92M
Ordering Information
Type NO.
2SC5342M
Marking
5342
Package Code
TO-92M
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
40
32
5
500
400
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=100μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=20mA
V
CB
=6V, I
E
=0, f=1MHz
Min. Typ. Max.
40
32
5
-
-
70
-
-
-
300
7.0
-
-
-
-
-
-
-
-
-
0.1
0.1
240
0.25
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
* : h
FE
Rank / O : 70~140, Y : 120~240
KSD-T0B001-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
