2SC5345
NPN Silicon Transistor
Description
•
RF amplifier
PIN Connection
C
Features
•
High current transition frequency
f
T
=550MHz(Typ.), [V
CE
=6V, I
E
=-1mA]
•
Low output capacitance :
C
ob
=1.4pF(Typ.) [V
CB
=6V, I
E
=0]
•
Low base time constant and high gain
•
Excellent noise response
B
C
B
E
E
TO-92
Ordering Information
Type NO.
2SC5345
Marking
C5345
Package Code
TO-92
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
4
20
500
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Test Condition
I
C
=10μA, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=6V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CE
=6V, I
E
=-1mA
V
CB
=6V, I
E
=0, f=1MHz
Min. Typ. Max.
30
20
4
-
-
40
-
-
-
-
-
-
-
-
-
-
550
1.4
-
-
-
0.5
0.5
240
0.3
-
-
Unit
V
V
V
μA
μA
-
V
MHz
pF
* : h
FE
rank / R : 40~80, O : 70~140, Y : 120~240
KSD-T0A020-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
