BC856
PNP Silicon Transistor
Descriptions
•
General purpose application
•
Switching application
PIN Connection
Features
•
High voltage : V
CEO
=-55V
•
Complementary pair with BC846
C
B
E
SOT-23
Ordering Information
Type NO.
BC856
Marking
TA
□ □
① ② ③
①
Device Code
②
hFE Rank
③
Year&Week Code
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-80
-55
-5
-100
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Base-Emitter saturation voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Noise figure
(Ta=25°C)
Symbol
BV
CEO
V
BE(ON)
V
BE(sat)
V
CE(sat)
I
CBO
h
FE
*
f
T
C
ob
NF
Test Condition
I
C
=-2mA, I
B
=0
V
CE
=-5V, I
C
=-2mA
I
C
=-100mA, I
B
=-5mA
I
C
=-100mA, I
B
=-5mA
V
CB
=-35V, I
E
=0
V
CE
=-5V, I
C
=-2mA
V
CB
=-5V, I
C
=-10mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-5V, I
C
=-200μA,
f=1KHz,Rg=2KΩ
Min. Typ. Max.
-55
-
-
-
-
110
-
-
-
-
-
-900
-
-
-
150
-
-
-
-700
-
-650
-15
800
-
4.5
10
Unit
V
mV
mV
mV
nA
-
MHz
pF
dB
* : h
FE
rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KSD-T5C030-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
