DN030S
NPN Silicon Transistor
Features
•
Extremely low collector-to-emitter
saturation voltage
( V
CE(SAT)
= 0.1V Typ. @I
C
/I
B
=100mA/10mA)
•
Suitable for low voltage large current drivers
•
Complementary pair with DP030S
•
Switching Application
PIN Connection
3
1
2
Ordering Information
Type NO.
DN030S
Marking
N01
□
① ②
①
Device Code
②
Year&Week Code
SOT-23F
SOT-23F
Package Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
12
5
300
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat1)
V
CE(sat2)
V
BE(sat1)
V
BE(sat2)
f
T
C
ob
Test Condition
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=12V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=300mA
I
C
=100mA, I
B
=10mA
I
C
=300mA, I
B
=30mA
I
C
=100mA, I
B
=10mA
I
C
=300mA, I
B
=30mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
Min. Typ. Max.
15
12
5
-
-
200
70
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
3
-
-
-
0.1
0.1
450
-
0.2
0.5
1.2
1.7
-
-
Unit
V
V
V
μA
μA
-
-
V
V
V
V
MHz
PF
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
KSD-T5C008-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
