DN200F
NPN Silicon Transistor
Features
•
Extremely low collector-to-emitter
saturation voltage
( V
CE(SAT)
= 0.2V Typ. @I
C
/I
B
=1A/50
㎃)
•
Suitable for low voltage large current drivers
•
Complementary pair with DP200F
•
Switching Application
PIN Connection
SOT-89
Ordering Information
Type NO.
DN200F
04: DEVICE CODE,
Marking
N04
YWW
Package Code
SOT-89
YWW(Y : Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
P
C
P
C
**
T
J
T
stg
Ratings
15
12
5
2
4
0.5
1
150
-55~150
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300
㎲
** : When mounted on ceramic substrate(250
㎟×0.8t)
KSD-T5B010-001
1
KODENSHI [ KODENSHI KOREA CORP. ]
