DP100S
PNP Silicon Transistor
Features
•
Extremely low collector-to-emitter
saturation voltage
( V
CE(SAT)
= -0.25V Typ. @I
C
/I
B
=-400mA/-20mA)
•
Suitable for low voltage large current drivers
•
Complementary pair with DN100S
•
Switching Application
PIN Connection
3
1
2
SOT-23F
Ordering Information
Type NO.
DP100S
Marking
P03
□
①
②
①Device
Code
②
Year&Week Code
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
-15
-12
-5
-1
200
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Test Condition
I
C
=-50μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-12V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-1A
I
C
=-400mA, I
B
=-20mA
I
C
=-400mA, I
B
=-20mA
V
CE
=-5V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
Min. Typ. Max.
-15
-12
-5
-
-
200
70
-
-
-
-
-
-
-
-
-
-
-
-
-
330
9
-
-
-
-0.1
-0.1
450
-
-0.3
-1.2
-
-
Unit
V
V
V
μA
μA
-
-
V
V
MHz
pF
KSD-T5C088-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
