DP500F
PNP Silicon Transistor
Description
•
•
•
•
Suitable for low voltage large current drivers
Excellent h
FE
Linearity
Complementary pair with DN500
Switching Application
PIN Connection
Ordering Information
Type NO.
DP500F
P5: DEVICE CODE,
Marking
P5
□YWW
□
:
h
FE
rank
, YWW(Y
SOT-89
Package Code
SOT-89
: Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* :
When mounted on ceramic substrate(250
㎟×0.8t)
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
Ratings
-15
-12
-5
-5
0.5
1
150
-55~150
Unit
V
V
V
A
W
°C
°C
T
J
T
stg
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter on voltage
Base-Emitter on voltage
Transition frequency
Collector output capacitance
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
*
h
FE2
V
CE(sat1)
V
BE(sat)
f
T
C
ob
Test Condition
I
C
=-50
㎂
, I
E
=0
I
C
=-1
㎃
, I
B
=0
I
E
=-50
㎂
, I
C
=0
V
CB
=-12V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-100
㎃
V
CE
=-1V, I
C
=-3A
I
C
=-3A, I
B
=-150
㎃
I
C
=-3A, I
B
=-150
㎃
V
CB
=-5V, I
C
=-500
㎃
V
CB
=-10V, I
E
=0, f=1
㎒
Min. Typ. Max.
-15
-12
-5
-
-
120
40
-
-
-
-
-
-
-
-
-
-
-
-
-
150
-
-
-
-
-1
-1
700
-
-0.5
-1.2
-
50
Unit
V
V
V
㎂
㎂
-
-
V
V
㎒
㎊
1
* : h
FE
rank / O : 120 ~ 240, Y : 200 ~ 400, G : 350 ~ 700
KSD-T5B020-000
KODENSHI [ KODENSHI KOREA CORP. ]
