Silicon photo transistor
KDT3002A
The KDT3002A is high sensitivity NPN silicon photo
transistor mounted in
Φ3mm(T-1)
all plastic mold type.
This photo transistor is both compact and
easy to mount.
Dimensions
[Unit : mm]
Features
Higly sensitive photo transistor
Visable ray cut off mold type
Applications
VCR, Camcoders
Floppy disk drivers
Optical detectors/switch
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature*
1
[T
A
= 25
Symbol
V
CEO
V
ECO
I
C
P
C
Topr.
Tstg.
Tsol
Rating
35
6
20
75
-20~+85
-30~+85
240
Unit
V
V
mA
mW
]
Notes : 1. For MAX. 5 seconds at the position of 3 mm from the package.
ELECTRO- OPTICAL CHARACTERISTICS
Description
Dark Current
Light Current
Spectral Sensitivity
Peek wavelength
Viewing Angle
Response Time(Rise Time)
Response Time(Fall Time)
p
∆θ
Symbol
I
CEO
I
CEL
Condition
V
CE
=10V, E
E
=0
V
CE
=10V, E
V
=500lx
※1
-
V
R
=0V
-
Min.
-
2.5
Typ.
-
5.0
700~1050
Max.
200
-
Unit
nA
mA
nm
nm
deg.
㎲
㎲
-
-
-
-
880
±30
2.5
4.7
-
-
-
-
tr
tf
※1
Color temp. =2856K Standard Tungsten lamp
V
CC
=10V, Ic=1㎃
RL=100Ω
-1-
KODENSHI [ KODENSHI KOREA CORP. ]
