Infrared Emitting Diodes(GaAs)
KEL-3001A
DIMENSIONS
The KEL-3001A is GaAs infrared emitting diode that is designed
for high power, low forward voltage and high speed rise / fall time.
This device is optimized for speed and efficiency at emission
wavelength 940nm and has a high radient efficiency over a wide
range of forward current.
(Unit : mm)
FEATURES
• 940nm wavelength
• Low forward voltage
• High power and high reliability
• Available for pulse operating
APPLICATIONS
• IR Audio and Telephone
• Communication
• Optical Switch
• Available for wireless digital data transmission
ABSOLUTE MAXIMUM RATINGS
Item
Power dissipation
Forward current
Pulse forward current *1
Reverse voltage
Operating temp.
Storage temp.
Soldering temp. *2
(Ta=25°C)
Symbol
P
D
I
F
I
FP
V
R
Topr.
Tstg.
Tsol.
Ratings
75
50
0.5
5
-25 ~ +85
-30 ~ +85
240
Unit
mW
mA
A
V
°C
°C
°C
*1. Duty ratio=1/100, pulse width=0.1ms
*2. Lead Soldering Temperature (3mm from case for 5sec).
ELECTRO-OPTICAL CHARACTERISTICS
Item
Symbol
Forward voltage
V
F
Reverse current
I
R
Capacitance
Ct
Radiant intensity
Po
Peak emission wavelength
Spectral bandwidth 50%
Half angle
λp
∆λ
∆θ
(Ta=25°C)
Conditions
I
F
=50mA
V
R
=5V
f=1MHz, V=0V
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Min.
-
-
-
5.0
-
-
-
Typ.
1.4
-
70
8.0
940
45
± 20
Max.
1.7
10
-
-
-
-
-
Unit
V
uA
pF
mW
nm
nm
deg.
KODENSHI [ KODENSHI KOREA CORP. ]
