SBT2222AF
NPN Silicon Transistor
Descriptions
•
General purpose application
•
Switching application
PIN Connection
3
1
2
Features
•
Low Leakage current
•
Low collector saturation voltage enabling
low voltage operation
•
Complementary pair with SBT2907AF
SOT-23F
Ordering Information
Type NO.
SBT2222AF
Marking
1P
□
① ②
①
Device Code
②
Year&Week Code
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
* : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Ratings
75
40
5
600
350
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=75V, I
E
=0
V
CE
=10V, I
C
=10mA
I
C
=150mA, I
B
=15mA
V
CE
=20V, I
C
=20mA,
f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CC
=30V
dc
, V
BE(off)
=0.5V
dc
,
I
C
=150mA
dc
, I
B1
=15mA
dc
V
CC
=30V
dc
,I
C
=150mA
dc
,
I
B1
=I
B2
=15mA
dc
Min. Typ. Max.
75
40
5
-
100
-
250
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
-
0.4
-
8
10
25
225
60
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
KSD-T5C011-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
