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SBT3906F 参数 Datasheet PDF下载

SBT3906F图片预览
型号: SBT3906F
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅晶体管 [PNP Silicon Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 239 K
品牌: KODENSHI [ KODENSHI KOREA CORP. ]
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SBT3906F
PNP Silicon Transistor
Descriptions
General small signal application
Switching application
PIN Connection
3
Features
Low collector saturation voltage
Collector output capacitance
Complementary pair with SBT3904F
1
2
SOT-23F
Ordering Information
Type NO.
SBT3906F
Marking
2A
①Device
Code
Year&Week Cod
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature range
* : Package mounted on 99.5% alumina 10×8×0.6mm
Ta=25°C
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C*
T
j
T
stg
Ratings
-40
-40
-5
-200
350
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Delay time
Rise time
Storage time
Fall Time
Ta=25°C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
h
FE
V
CE(sat)
f
T
C
ob
t
d
t
r
t
s
t
f
Test Condition
I
C
=-10μA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10μA, I
C
=0
V
CE
=-30V, V
EB
=-3V
V
CE
=-1V, I
C
=-10mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V, I
C
=-10mA,
f=100MHz
V
CB
=-5V, I
E
=0, f=1MHz
V
CC
=-3V
dc
, V
BE(off)
=-0.5V
dc
,
I
C
=-10mA
dc
, I
B1
=-1mA
dc
V
CC
=-3V
dc
,I
C
=-10mA
dc
,
I
B1
=I
B2
=-1mA
dc
Min.
-40
-40
-5
-
100
-
250
-
-
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-50
300
-0.4
-
4.5
35
35
225
75
Unit
V
V
V
nA
-
V
MHz
pF
ns
ns
ns
ns
KSD-T5C090-000
1