SBT5551
NPN Silicon Transistor
Descriptions
•
General purpose amplifier
•
High voltage application
PIN Connection
Features
•
high collector breakdown voltage : V
CBO
= 180V,
V
CEO
= 160V
•
Low collector saturation voltage : V
CE(sat)
=0.5V(MAX.)
•
Complementary pair with SBT5401
1
2
SOT-23
Ordering Information
Type NO.
SBT5551
Marking
FNF
□
① ②
①Device
Code
②
Year&Week Code
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
180
160
6
600
200
150
-55~150
Unit
V
V
V
mA
mW
°C
°C
KSD-T5C066-000
1
KODENSHI [ KODENSHI KOREA CORP. ]
