SDB10150DI
Absolute Maximum Ratings
(Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
per diode
Maximum average forward rectified current
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
I
FSM
T
stg
T
j
I
F(AV)
10
120
-45℃ to +150℃
150
A
℃
℃
Symbol
V
RRM
V
RWM
V
R
Value
Unit
150
V
5
A
Thermal Characteristics
Characteristic
per diode
Maximum thermal resistance junction to case
total device
R
th(j-c)
3.6
Symbol
Value
4.0
Unit
℃/W
Electrical Characteristics
(Per Diode)
Characteristic
Peak forward voltage drop
Symbol
V
FM
(1)
Test Condition
T
j
=25℃
I
FM
= 5A
T
j
=125℃
Min.
-
-
-
-
-
Typ.
-
-
-
-
80
Max.
0.88
0.75
10
10
-
Unit
V
V
uA
mA
pF
Reverse leakage current
Junction capacitance
I
RM (1)
C
j
T
j
=25℃
V
R
= V
RRM
T
j
=125℃
V
R
= 4V
DC
, f=1MHz
Note :
(1) Pulse test :
t
P
≤380
㎲,
Duty cycle≤2%
To evaluate the conduction losses use the following equation (Fig 4.) : P
F
= 0.72 x I
F(AV)
+ 0.021 I
F2(RMS)
I
FM
Forward Voltage : V
FM
= V
to
+ rd I
FM
2 I
F(AV)
rd
Conduction Loss : P
F
= V
to
I
F(AV)
+ rd
I
F2(RMS)
I
F(AV)
V
FM
V
to
KSD-D6O013-001
2
KODENSHI [ KODENSHI KOREA CORP. ]
